Attributes

Key Value
@Ic (test) (A)100m
@VCE (V)10
CaseTO128
Collector Capacitance (.36 pF
Derate Above 25?C130m
Forward Current Transfe.10
Ic Max. (A)2.0
Icbo Max. @Vcb Max. (A)200u
ManufacturerMitsubishi
Max. hFE180
Max. Operating Junction.200 ?C
Max. PD (W)20
Maximum Collector Curre.2 A
Maximum Collector Power.20 W
Maximum Collector-Base .35 V
Maximum Collector-Emitt.17 V
Maximum Emitter-Base Vo.4 V
Min hFE10
Oper. Temp (?C) Max.175
Pinout Equivalence Numb.4-28
PolarityNPN
SKU766382
Surface Mounted Yes/NoNO
Trans. Freq (Hz) Min.1.0G
Transition Frequency (f.500 MHz
TypeTransistor Silicon NPN
Vbr CBO35
Vbr CEO17
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