Attributes

Key Value
@Ic (test) (A)2.5
@VCE (test)5.0
CaseTO220
Collector Capacitance (.300 pF
Derate Above 25?C600m
Forward Current Transfe.250
Ic Max. (A)7.0
Icbo Max. @Vcb Max. (A)1.0m
ManufacturerMotorola Semiconductor
Mat.Silicon Logic
Max. Operating Junction.150 ?C
Max. PD (W)75
Maximum Collector Curre.7 A
Maximum Collector Power.75 W
Maximum Collector-Base .475 V
Maximum Collector-Emitt.450 V
Maximum Emitter-Base Vo.5 V
Min hFE250
Oper. Temp (?C) Max.150
Pinout Equivalence Numb.4-100
PolarityNPN
SKU84920
Surface Mounted Yes/NoNO
Trans. Freq (Hz) Min.7.5M
Transition Frequency (f.3 MHz
TypeTransistor Silicon NPN
Vbr CEO425
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