Attributes

Key Value
@Ic (test) (A)2.0
@VCE (V)1.0
CaseTOP66
Collector Capacitance (.400 pF
Derate (Amb) (W/?C)1.7
Forward Current Transfe.20
Ic Max. (A)15
Icbo Max. @Vcb Max. (A)10u
ManufacturerMotorola Semiconductor
Max. Operating Junction.150 ?C
Max. PD (W)83
Maximum Collector Curre.15 A
Maximum Collector Power.75 W
Maximum Collector-Base .45 V
Maximum Collector-Emitt.45 V
Maximum Emitter-Base Vo.5 V
Min hFE35
Oper. Temp (?C) Max.150
Pinout Equivalence Numb.4-33
PolarityPNP
SKU116817
Surface Mounted Yes/NoNO
t(f) Max. (S)90n
Tr Max. (s)250n
Trans. Freq (Hz) Min.50M
Transition Frequency (f.25 MHz
TypeTransistor Silicon PNP
Vbr CBO70
Vbr CEO45
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