Attributes

Key Value
@Ic (test) (A)60m
@VCE (V)20
CaseTO39
Collector Capacitance (.3.5 pF
Derate Above 25?C40m
Forward Current Transfe.20
Ic Max. (A)80m
Icbo Max. @Vcb Max. (A)200n
ManufacturerMotorola Semiconductor
Max. Operating Junction.175 ?C
Max. PD (W)3.0
Maximum Collector Curre.0.08 A
Maximum Collector Power.3 W
Maximum Collector-Base .200 V
Maximum Collector-Emitt.90 V
Maximum Emitter-Base Vo.5 V
Min hFE20
Oper. Temp (?C) Max.175
Pinout Equivalence Numb.3-12
PolarityNPN
SKU85921
Surface Mounted Yes/NoNO
Trans. Freq (Hz) Min.120M
Transition Frequency (f.60M MHz
TypeTransistor Silicon NPN
Vbr CEO200
© 2025 · Data Alchemy · Version 60 · ts:1760052239
prev