Attributes

Key Value
@Ic (test) (A)8.0
@VCE (V)5.0
CaseTO3
Collector Capacitance (.350 pF
Derate Above 25?C1.0
Forward Current Transfe.5
Ic Max. (A)8.0
Icbo Max. @Vcb Max. (A)2.5m+
ManufacturerMotorola Semiconductor
Max. hFE8.0-
Max. Operating Junction.200 ?C
Max. PD (W)150
Maximum Collector Curre.8 A
Maximum Collector Power.150 W
Maximum Collector-Base .1000 V
Maximum Collector-Emitt.500 V
Maximum Emitter-Base Vo.6 V
Min hFE5.0
Oper. Temp (?C) Max.175
Pinout Equivalence Numb.3-15
PolarityNPN
SKU254006
Surface Mounted Yes/NoNO
t(f) Max. (S)400n
Tr Max. (s)700n
TypeTransistor Silicon NPN
Vbr CEO500
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