@Ic (test) (A), R(sat) (?) | 600m |
@VCE (V) | 5.0 |
Case | TO218 |
Derate Above 25?C | 900m |
Forward Current Transfer Ratio (hFE), MIN | 5 |
Ic Max. (A) | 6.0 |
Icbo Max. @Vcb Max. (A) | 1.0m |
Manufacturer | Multicomp |
Max. hFE | 60 |
Max. Operating Junction Temperature (Tj) | 150 ?C |
Max. PD (W) | 113 |
Maximum Collector Current |Ic max| | 6 A |
Maximum Collector Power Dissipation (Pc) | 114 W |
Maximum Collector-Base Voltage |Vcb| | 900 V |
Maximum Collector-Emitter Voltage |Vce| | 400 V |
Maximum Emitter-Base Voltage |Veb| | 10 V |
Min hFE | 30- |
Oper. Temp (?C) Max. | 150 |
Pinout Equivalence Number | 4-33 |
Polarity | NPN |
SKU | 20274 |
Surface Mounted Yes/No | NO |
t(f) Max. (S) | 750n |
Tr Max. (s) | 600n |
Trans. Freq (Hz) Min. | 6.0M |
Transition Frequency (ft): | 3 MHz |
Type | Transistor Silicon NPN |
Vbr CEO | 400 |