| @Ic (test) (A), R(sat) (?) | 600m |
| @VCE (V) | 5.0 |
| Case | TO218 |
| Derate Above 25?C | 900m |
| Forward Current Transfer Ratio (hFE), MIN | 5 |
| Ic Max. (A) | 6.0 |
| Icbo Max. @Vcb Max. (A) | 1.0m |
| Manufacturer | Multicomp |
| Max. hFE | 60 |
| Max. Operating Junction Temperature (Tj) | 150 ?C |
| Max. PD (W) | 113 |
| Maximum Collector Current |Ic max| | 6 A |
| Maximum Collector Power Dissipation (Pc) | 114 W |
| Maximum Collector-Base Voltage |Vcb| | 900 V |
| Maximum Collector-Emitter Voltage |Vce| | 400 V |
| Maximum Emitter-Base Voltage |Veb| | 10 V |
| Min hFE | 30- |
| Oper. Temp (?C) Max. | 150 |
| Pinout Equivalence Number | 4-33 |
| Polarity | NPN |
| SKU | 20274 |
| Surface Mounted Yes/No | NO |
| t(f) Max. (S) | 750n |
| Tr Max. (s) | 600n |
| Trans. Freq (Hz) Min. | 6.0M |
| Transition Frequency (ft): | 3 MHz |
| Type | Transistor Silicon NPN |
| Vbr CEO | 400 |