Attributes

Key Value
@Ic (A)1.0m
@VCE (test) (V)6.0
C(ob) (F)1.9p
CaseTO92
Collector Capacitance (.3.8 pF
Derate (Amb) (W/?C)2.5m
Forward Current Transfe.90
hfe40
Ic Max. (A)30m
Icbo Max. @Vcb Max. (A)100n
ManufacturerNEC
Max. Operating Junction.120 ?C
Max. PD (W)250m
Maximum Collector Curre.0.03 A
Maximum Collector Power.0.25 W
Maximum Collector-Base .50 V
Maximum Collector-Emitt.30 V
Maximum Emitter-Base Vo.5 V
Oper. Temp (?C) Max.125
Pinout Equivalence Numb.3-10
PolarityNPN
SKU557835
Surface Mounted Yes/NoNO
Trans. Freq (Hz) Min.250m
Transition Frequency (f.125 MHz
TypeTransistor Silicon NPN
Vbr CBO50
Vbr CEO30
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