Attributes

Key Value
CategoryDiscrete Semiconductor .
Current - Continuous Dr.190mA (Ta)
Drain to Source Voltage.60V
FET Feature-
FET TypeN-Channel
Gate Charge (Qg) (Max) .0.43nC @ 4.5V
Input Capacitance (Ciss.17pF @ 10V
MfrNexperia USA Inc.
Mounting TypeSurface Mount
Operating Temperature-55?C ~ 150?C (TJ)
PackageCut Tape (CT)
Package / CaseTO-236-3, SC-59, SOT-23.
Part StatusDiscontinued at Digi-Key
Power Dissipation (Max)265mW (Ta), 1.33W (Tc)
Rds On (Max) @ Id, Vgs4.5Ohm @ 100mA, 10V
Series*
Supplier Device PackageTO-236AB
TechnologyMOSFET (Metal Oxide)
Vgs(th) (Max) @ Id2.1V @ 250?A
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