Attributes

Key Value
CategoryDiscrete Semiconductor .
Current - Continuous Dr.100A (Tc)
Drain to Source Voltage.30 V
FET Feature-
FET TypeN-Channel
Gate Charge (Qg) (Max) .64 nC @ 10 V
Input Capacitance (Ciss.3980 pF @ 12 V
MfrNexperia USA Inc.
Mounting TypeSurface Mount
Operating Temperature-
PackageTape & Reel (TR)
Package / CaseSC-100, SOT-669
Power Dissipation (Max)-
Product StatusObsolete
Rds On (Max) @ Id, Vgs2mOhm @ 15A, 10V
SeriesTrenchMOS?
Supplier Device PackageLFPAK56, Power-SO8
TechnologyMOSFET (Metal Oxide)
Vgs(th) (Max) @ Id2.15V @ 1mA
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