Nexperia USA Inc. PMK35EP,518

mpnPMK35EP,518
brandname: Nexperia USA Inc.
manufacturername: Nexperia USA Inc.

Attributes

Key	Value
Category	Discrete Semiconductor .
Current - Continuous Dr.	14.9A (Tc)
Drain to Source Voltage.	30 V
Drive Voltage (Max Rds .	10V
FET Feature	-
FET Type	P-Channel
Gate Charge (Qg) (Max) .	42 nC @ 10 V
Input Capacitance (Ciss.	2100 pF @ 25 V
Mfr	Nexperia USA Inc.
Mounting Type	Surface Mount
Operating Temperature	-55?C ~ 150?C (TJ)
Package	Tape & Reel (TR)
Package / Case	8-SOIC (0.154", 3.90mm .
Part Status	Obsolete
Power Dissipation (Max)	6.9W (Tc)
Rds On (Max) @ Id, Vgs	19mOhm @ 9.2A, 10V
Series	TrenchMOS?
Supplier Device Package	8-SO
Technology	MOSFET (Metal Oxide)
Vgs (Max)	?25V
Vgs(th) (Max) @ Id	3V @ 250?A