Nexperia USA Inc. PMZB370UNE,315-NEX

mpnPMZB370UNE,315-NEX
brandname: Nexperia USA Inc.
manufacturername: Nexperia USA Inc.

Attributes

Key	Value
Category	Discrete Semiconductor .
Current - Continuous Dr.	900mA (Ta)
Drain to Source Voltage.	30 V
Drive Voltage (Max Rds .	1.8V, 4.5V
FET Feature	-
FET Type	N-Channel
Gate Charge (Qg) (Max) .	1.16 nC @ 15 V
Input Capacitance (Ciss.	78 pF @ 25 V
Mfr	Nexperia USA Inc.
Mounting Type	Surface Mount
Operating Temperature	-55?C ~ 150?C (TJ)
Package	Bulk
Package / Case	3-XFDFN
Power Dissipation (Max)	360mW (Ta), 2.7W (Tc)
Product Status	Active
Rds On (Max) @ Id, Vgs	490mOhm @ 500mA, 4.5V
Series	-
Supplier Device Package	DFN1006B-3
Technology	MOSFET (Metal Oxide)
Vgs (Max)	?8V
Vgs(th) (Max) @ Id	1.05V @ 250?A