Nexperia USA Inc. PSMN4R8-100YSE

mpnPSMN4R8-100YSE
brandname: Nexperia USA Inc.
manufacturername: Nexperia USA Inc.

Attributes

Key	Value
Category	Discrete Semiconductor .
Current - Continuous Dr.	120A (Ta)
Drain to Source Voltage.	100 V
Drive Voltage (Max Rds .	10V
FET Feature	-
FET Type	N-Channel
Gate Charge (Qg) (Max) .	120 nC @ 10 V
Input Capacitance (Ciss.	8290 pF @ 50 V
Mfr	Nexperia USA Inc.
Mounting Type	Surface Mount
Operating Temperature	-55?C ~ 175?C (TJ)
Package	Tape & Reel (TR)
Package / Case	SOT-1023, 4-LFPAK
Part Status	Active
Power Dissipation (Max)	294W (Ta)
Rds On (Max) @ Id, Vgs	4.8mOhm @ 25A, 10V
Series	-
Supplier Device Package	LFPAK56, Power-SO8
Technology	MOSFET (Metal Oxide)
Vgs (Max)	?20V
Vgs(th) (Max) @ Id	3.6V @ 1mA