Attributes

Key Value
@Ic (A)7.0m
@VCE (test) (V)20i
C(ob) (F)1.3p
CaseTO92
Collector Capacitance (.2.6 pF
Derate (Amb) (W/?C)2.0m
Forward Current Transfe.50
hfe100
Ic Max. (A)25m
Icbo Max. @Vcb Max. (A).30u
ManufacturerNXP Semiconductors
Max. Operating Junction.150 ?C
Max. PD (W)260m
Maximum Collector Curre.0.025 A
Maximum Collector Power.0.026 W
Maximum Collector-Base .50 V
Maximum Collector-Emitt.30 V
Maximum Emitter-Base Vo.4 V
Oper. Temp (?C) Max.175
Pinout Equivalence Numb.N/A
PolarityNPN
SKU136293
Surface Mounted Yes/NoNO
Trans. Freq (Hz) Min.550M
Transition Frequency (f.275 MHz
TypeTransistor Silicon NPN
Vbr CBO50
Vbr CEO30
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