Attributes

Key Value
@Ic (A)20m
@VCE (test) (V)15
C(ob) (F)3.5p
CaseTO39
Collector Capacitance (.3.6 pF
Derate (Amb) (W/?C)5.3m
Forward Current Transfe.20
hfe20
Ic Max. (A)100m
ManufacturerNXP Semiconductors
Max. Operating Junction.200 ?C
Max. PD (W)600m
Maximum Collector Curre.0.05 A
Maximum Collector Power.0.6 W
Maximum Collector-Base .250 V
Maximum Collector-Emitt.115 V
Maximum Emitter-Base Vo.5 V
Oper. Temp (?C) Max.175
Pinout Equivalence Numb.3-12
PolarityNPN
SKU86326
Surface Mounted Yes/NoNO
Trans. Freq (Hz) Min.120M
Transition Frequency (f.50 MHz
TypeTransistor Silicon NPN
Vbr CBO250
Vbr CEO115
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