Attributes

Key Value
@Ic (A)4.0m
@VCE (test) (V)10
C(ob) (F)200f
CaseTO92
Collector Capacitance (.0.4 pF
Derate (Amb) (W/?C)2.4m
Forward Current Transfe.27
hfe60
Ic Max. (A)25m
Icbo Max. @Vcb Max. (A)50n
ManufacturerNXP Semiconductors
Max. Operating Junction.125 ?C
Max. PD (W)250m
Maximum Collector Curre.0.025 A
Maximum Collector Power.0.25 W
Maximum Collector-Base .40 V
Maximum Collector-Emitt.30 V
Maximum Emitter-Base Vo.4 V
Oper. Temp (?C) Max.125
Pinout Equivalence Numb.3-14
PolarityNPN
SKU20266
Surface Mounted Yes/NoNO
Trans. Freq (Hz) Min.400M
Transition Frequency (f.200 MHz
TypeTransistor Silicon NPN
Vbr CBO40
Vbr CEO30
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