| Breakdown Voltage-Nom | 6.8 V |
| Clamping Voltage-Max | 11 V |
| Configuration | COMMON ANODE, 18 ELEMENTS |
| Diode Capacitance-Min | 120 pF |
| Diode Element Material | SILICON |
| Diode Type | TRANS VOLTAGE SUPPRESSOR DIODE |
| JEDEC-95 Code | MS-013AC |
| JESD-30 Code | R-PDSO-G20 |
| JESD-609 Code | e4 |
| Manufacturer | NXP Semiconductors |
| Manufacturer Part Number | BZA100 |
| Moisture Sensitivity Level | 1 |
| Non-rep Peak Rev Power Dis-Max | 27.5 W |
| Number of Elements | 18 |
| Number of Terminals | 20 |
| Operating Temperature-Max | 150 ?C |
| Package Body Material | PLASTIC/EPOXY |
| Package Description | R-PDSO-G20 |
| Package Shape | RECTANGULAR |
| Package Style | SMALL OUTLINE |
| Packaging | - |
| Part Package Code | SOIC |