mpn
PESD12VV1BL
brand
name: NXP Semiconductors
manufacturer
name: NXP Semiconductors
Attributes
Key
Value
Breakdown Voltage-Max
16.8 V
Breakdown Voltage-Min
14.6 V
Configuration
SINGLE
Diode Element Material
SILICON
Diode Type
TRANS VOLTAGE SUPPRESS.
JESD-30 Code
R-PBCC-N2
JESD-609 Code
e3
Manufacturer
NXP Semiconductors
Manufacturer Part Number
PESD12VV1BL
Moisture Sensitivity Le.
1
Non-rep Peak Rev Power .
290 W
Number of Elements
1
Number of Terminals
2
Operating Temperature-M.
150 ?C
Operating Temperature-M.
-55 ?C
Package Body Material
PLASTIC/EPOXY
Package Description
1.00 X 0.60 MM, 0.50 M.
Package Shape
RECTANGULAR
Package Style
CHIP CARRIER
Packaging
-
Peak Reflow Temperature.
260
Polarity
BIDIRECTIONAL