NXP USA Inc. 2N7000,126

mpn2N7000,126
brandname: NXP USA Inc.
manufacturername: NXP USA Inc.

Attributes

Key	Value
Base Product Number	2N70
Category	Discrete Semiconductor .
Current - Continuous Dr.	300mA (Tc)
Drain to Source Voltage.	60 V
Drive Voltage (Max Rds .	4.5V, 10V
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss.	40 pF @ 10 V
Mfr	NXP USA Inc.
Mounting Type	Through Hole
Operating Temperature	-55?C ~ 150?C (TJ)
Package	Tape & Box (TB)
Package / Case	TO-226-3, TO-92-3 (TO-2.
Part Status	Obsolete
Power Dissipation (Max)	830mW (Ta)
Rds On (Max) @ Id, Vgs	5Ohm @ 500mA, 10V
Series	TrenchMOS?
Supplier Device Package	TO-92-3
Technology	MOSFET (Metal Oxide)
Vgs (Max)	?30V
Vgs(th) (Max) @ Id	2V @ 1mA