Attributes

Key Value
CategoryDiscrete Semiconductor .
Current - Continuous Dr.10V
Drain to Source Voltage.61nC @ 10V
Drive Voltage (Max Rds .25mOhm @ 25A, 10V
FET Feature62.5W (Tc)
FET TypeMOSFET (Metal Oxide)
Gate Charge (Qg) (Max) .2600pF @ 25V
MfrNXP USA Inc.
Mounting TypeTO-220F
Operating TemperatureThrough Hole
PackageObsolete
Package / Case110V
Part StatusN-Channel
Power Dissipation (Max)-55?C ~ 150?C (TJ)
Rds On (Max) @ Id, Vgs4V @ 1mA
SeriesTube
Supplier Device PackageTO-220-3 Full Pack, Iso.
Technology30.4A (Tc)
Vgs (Max)-
Vgs(th) (Max) @ Id?20V
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