NXP USA Inc. PMPB40SNA115

mpnPMPB40SNA115
brandname: NXP USA Inc.
manufacturername: NXP USA Inc.

Attributes

Key	Value
Category	Discrete Semiconductor .
Current - Continuous Dr.	12.9A (Tc)
Drain to Source Voltage.	60 V
Drive Voltage (Max Rds .	4.5V, 10V
FET Feature	-
FET Type	N-Channel
Gate Charge (Qg) (Max) .	24 nC @ 10 V
Input Capacitance (Ciss.	612 pF @ 30 V
Mfr	NXP USA Inc.
Mounting Type	Surface Mount
Operating Temperature	-55?C ~ 150?C (TJ)
Package	Bulk
Package / Case	6-UDFN Exposed Pad
Part Status	Active
Power Dissipation (Max)	1.7W (Ta), 12.5W (Tc)
Rds On (Max) @ Id, Vgs	43mOhm @ 4.8A, 10V
Series	-
Supplier Device Package	DFN2020MD-6
Technology	MOSFET (Metal Oxide)
Vgs (Max)	?20V
Vgs(th) (Max) @ Id	3V @ 250?A