Attributes

Key Value
Base Product NumberPSMN0
CategoryDiscrete Semiconductor .
Current - Continuous Dr.75A (Tc)
Drain to Source Voltage.36 V
Drive Voltage (Max Rds .4.5V, 10V
FET Feature-
FET TypeN-Channel
Gate Charge (Qg) (Max) .97 nC @ 5 V
Input Capacitance (Ciss.6000 pF @ 20 V
MfrNXP USA Inc.
Mounting TypeSurface Mount
Operating Temperature-55?C ~ 175?C (TJ)
PackageTape & Reel (TR)
Package / CaseTO-263-3, D?Pak (2 Lead.
Power Dissipation (Max)230W (Tc)
Product StatusObsolete
Rds On (Max) @ Id, Vgs4mOhm @ 25A, 10V
SeriesTrenchMOS?
Supplier Device PackageD2PAK
TechnologyMOSFET (Metal Oxide)
Vgs (Max)?15V
Vgs(th) (Max) @ Id2V @ 1mA
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