Attributes

Key Value
Collector Current200 mA
Collector to Base Volta.40 V
Collector to Emitter Vo.40 V
ConfigurationCommon Base
Dimensions5.20 x 4.19 x 5.33 mm
Emitter to Base Voltage5 V
Height0.21" (5.33mm)
Length0.204" (5.2mm)
MaterialSi
Maximum Operating Tempe.+150 ?C
Minimum Operating Tempe.-55 ?C
Mounting TypeThrough Hole
Number of Elements per .1
Number of Pins3
Operating Frequency250 MHz
Package TypeTO-92
PolarityPNP
Power Dissipation250 mW
Primary TypeSi
Product HeaderPNP Silicon General Pur.
Resistance, Thermal, Ju.83.3 ?C/W
Series2N Bipolar Series
Temperature Operating R.-55 to +150 ?C
Transistor TypePNP
TypeGeneral Purpose
Voltage, Breakdown, Col.40 V
Voltage, Collector to E.0.4 V
Voltage, Saturation, Ba.0.95 V
Width0.165" (4.19mm)
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