ON Semiconductor 2SK4124-1E

mpn2SK4124-1E
brandname: ON Semiconductor
manufacturername: ON Semiconductor

Attributes

Key	Value
Current - Continuous Dr.	20A (Ta)
Drain to Source Voltage.	500 V
Drive Voltage (Max Rds .	10V
FET Feature	-
FET Type	N-Channel
Gate Charge (Qg) (Max) .	46.6 nC @ 10 V
Input Capacitance (Ciss.	1200 pF @ 30 V
Mfr	ON Semiconductor
Mounting Type	Through Hole
Operating Temperature	150?C (TJ)
Package / Case	TO-3P-3, SC-65-3
Part Status	Obsolete
Power Dissipation (Max)	2.5W (Ta), 170W (Tc)
Rds On (Max) @ Id, Vgs	430mOhm @ 8A, 10V
Series	-
Supplier Device Package	TO-3P-3L
Technology	MOSFET (Metal Oxide)
Vgs (Max)	?30V
Vgs(th) (Max) @ Id	-