Attributes

Key Value
CategoryDiscrete Semiconductor .
Current - Continuous Dr.4A (Tc)
Drain to Source Voltage.600V
Drive Voltage (Max Rds .10V
FET Feature-
FET TypeN-Channel
Gate Charge (Qg) (Max) .14.3nC @ 10V
Input Capacitance (Ciss.360pF @ 30V
MfrON Semiconductor
Mounting TypeThrough Hole
Operating Temperature150?C (TJ)
PackageTube
Package / CaseTO-220-3
Part StatusObsolete
Power Dissipation (Max)2W (Ta), 30W (Tc)
Rds On (Max) @ Id, Vgs2.34Ohm @ 2.5A, 10V
Series-
Supplier Device PackageTO-220-3
TechnologyMOSFET (Metal Oxide)
Vgs (Max)?30V
Vgs(th) (Max) @ Id-
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