ON Semiconductor ARNEW-42AC1708-D2018

B07J4NKNV3

ON SEMICONDUCTOR BBS3002-DL-1E MOSFET Transistor, P Channel, -100 A, -60 V, 0.0044 ohm, -10 V

ON SEMICONDUCTOR BBS3002-DL-1E MOSFET Transistor, P Channel, -100 A, -60 V, 0.0044 ohm, -10 Vzoom

Attributes

Key Value
Alternate Part No.863-BBS3002-DL-1E
Base Product NumberBBS300
BrandON Semiconductor
CategoryDiscrete Semiconductor .
Ciss - Input Capacitance13.2 nF
ConfigurationSingle
Current - Continuous Dr.100A (Ta)
Drain to Source Voltage.60 V
Drive Voltage (Max Rds .4V, 10V
Fall Time820 ns
FET Feature-
FET TypeP-Channel
Gate Charge (Qg) (Max) .280 nC @ 10 V
Id - Continuous Drain C.- 100 A
Input Capacitance (Ciss.13200 pF @ 20 V
ManufacturerON Semiconductor
Manufacturer Part No.BBS3002-DL-1E
Maximum Operating Tempe.+ 150 C
MfrON Semiconductor
Minimum Operating Tempe.- 55 C
Mounting StyleSMD/SMT
Mounting TypeSurface Mount
Operating Temperature150?C (TJ)
PackageTape & Reel (TR)
Package / CaseTO-263-3, D?Pak (2 Lead.
Package/CaseD2PAK-2
PackagingReel
Part StatusActive
Pd - Power Dissipation90 W
Power Dissipation (Max)90W (Tc)
Product CategoryMOSFET
Qg - Gate Charge280 nC
Rds On (Max) @ Id, Vgs5.8mOhm @ 50A, 10V
Rds On - Drain-Source R.6.4 mOhms
Rise Time1000 ns
Series-, BBS3002
Supplier Device PackageD?PAK (TO-263)
TechnologyMOSFET (Metal Oxide)
Transistor PolarityP-Channel
Typical Turn-Off Delay .800 ns
Vds - Drain-Source Brea.- 60 V
Vgs (Max)?20V
Vgs - Gate-Source Break.20 V
Vgs(th) (Max) @ Id-

All Prices

Img Seller Supplier SKU Min Price MOQ In Stock Lead Time Brand Weight Preferred Tier
HotendaH18210752.365580042ON Semiconductor2.3655 @ 800
Future Electronics50765092.44880049ON Semiconductor2.448 @ 800
thumbzoomDigi-Key52131944.2280023ON Semiconductor4.22 @ 1
RS Delivers186-80065.86085In StockON Semiconductor5.8608 @ 5
thumbzoomswatee.comBBS3002-DL-1E7.411513ON Semiconductor7.41 @ 1
AmazonTPB07J4NKNV37.81232ON SEMICONDUCTOR7.8 @ 1
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