Attributes

Key Value
CategoryDiscrete Semiconductor .
Current - Continuous Dr.10V
Drain to Source Voltage.11nC @ 10V
Drive Voltage (Max Rds .600mOhm @ 3A, 10V
FET Feature24W (Tc)
FET TypeMOSFET (Metal Oxide)
Gate Charge (Qg) (Max) .465pF @ 400V
MfrON Semiconductor
Mounting TypeTO-220F-3
Operating TemperatureThrough Hole
PackageActive
Package / Case650V
Part StatusN-Channel
Power Dissipation (Max)-55?C ~ 150?C (TJ)
Rds On (Max) @ Id, Vgs4.5V @ 600?A
SeriesBulk
Supplier Device PackageTO-220-3 Full Pack
Technology6A (Tc)
Vgs (Max)-
Vgs(th) (Max) @ Id?30V
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