Attributes

Key Value
Base Product NumberFCPF850
CategoryDiscrete Semiconductor .
Current - Continuous Dr.6A (Tc)
Drain to Source Voltage.800V
Drive Voltage (Max Rds .10V
FET Feature-
FET TypeN-Channel
Gate Charge (Qg) (Max) .29nC @ 10V
Input Capacitance (Ciss.1315pF @ 100V
MfrON Semiconductor
Mounting TypeThrough Hole
Operating Temperature-55?C ~ 150?C (TJ)
PackageTube
Package / CaseTO-220-3 Full Pack
Part StatusActive
Power Dissipation (Max)28.4W (Tc)
Rds On (Max) @ Id, Vgs850mOhm @ 3A, 10V
SeriesSuperFET? II
Supplier Device PackageTO-220F
TechnologyMOSFET (Metal Oxide)
Vgs (Max)?20V
Vgs(th) (Max) @ Id4.5V @ 600?A
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