Base Product Number | FDP060 |
Case | TO220 |
Category | Discrete Semiconductor Products |
Channel Type | N |
Current - Continuous Drain (Id) @ 25?C | 16A (Ta), 80A (Tc) |
Drain current | 80A |
Drain to Source Voltage (Vdss) | 75 V |
Drain-source voltage | 75V |
Drive Voltage (Max Rds On, Min Rds On) | 6V, 10V |
FET Feature | - |
FET Type | N-Channel |
Gate charge | 95nC |
Gate Charge (Qg) (Max) @ Vgs | 95 nC @ 10 V |
Gate-source voltage, Vgs (Max) | ?20V |
Input Capacitance (Ciss) (Max) @ Vds | 5150 pF @ 25 V |
Kind of channel | enhanced |
Kind of package, Package | tube |
Manufacturer, Mfr | ONSEMI |
Mounting | THT |
Mounting Type | Through Hole |
On-state resistance | 13m? |
Operating Temperature | -55?C ~ 175?C (TJ) |
Package / Case, Supplier Device Package | TO-220-3 |
Part Status | Active |
Polarisation | unipolar |
Power dissipation | 255W |
Power Dissipation (Max) | 255W (Tc) |
Rds On (Max) @ Id, Vgs | 6mOhm @ 80A, 10V |
Series, Technology | PowerTrench? |
Technology | MOSFET (Metal Oxide) |
Type of transistor | N-MOSFET |
Vgs(th) (Max) @ Id | 4V @ 250?A |