B07QDPGKQP

FDP4D5N10C, Trans MOSFET N-CH 100V 128A 3-Pin(3+Tab) TO-220 Tube (5 Items)

Attributes

Key Value
Base Product NumberFDP4D5
CategoryDiscrete Semiconductor .
Current - Continuous Dr.128A (Tc)
Drain to Source Voltage.100 V
Drive Voltage (Max Rds .10V
FET Feature-
FET TypeN-Channel
Gate Charge (Qg) (Max) .68 nC @ 10 V
Input Capacitance (Ciss.5065 pF @ 50 V
Mfronsemi
Mounting TypeThrough Hole
Operating Temperature-55?C ~ 175?C (TJ)
PackageTube
Package / CaseTO-220-3
Part StatusActive
Power Dissipation (Max)2.4W (Ta), 150W (Tc)
Rds On (Max) @ Id, Vgs4.5mOhm @ 100A, 10V
SeriesPowerTrench?
Supplier Device PackageTO-220-3
TechnologyMOSFET (Metal Oxide)
Vgs (Max)?20V
Vgs(th) (Max) @ Id4V @ 310?A

All Prices

Img Seller Supplier SKU Min Price MOQ In Stock Lead Time Brand Weight Preferred Tier
thumbzoomNewark65AC47072.918005ONSEMI2.91 @ 800
WaldomON SEMICONDUCTOR FDP4D5N10C4.1215383ON SEMICONDUCTOR4.12 @ 15
Digi-Key86363814.6085378005onsemi4.608537 @ 800
RS Delivers181-18594.744815onsemi4.7448 @ 5
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