Attributes

Key Value
CategoryDiscrete Semiconductor .
Current - Continuous Dr.10V
Drain to Source Voltage.70 nC @ 10 V
Drive Voltage (Max Rds .60mOhm @ 25.5A, 10V
FET Feature38W (Tc)
FET TypeMOSFET (Metal Oxide)
Gate Charge (Qg) (Max) .3410 pF @ 25 V
MfrON Semiconductor
Mounting TypeTO-220F-3 (Y-Forming)
Operating TemperatureThrough Hole
PackageActive
Package / Case250 V
Part StatusN-Channel
Power Dissipation (Max)-55?C ~ 150?C (TJ)
Rds On (Max) @ Id, Vgs5V @ 250?A
SeriesTube
Supplier Device PackageTO-220-3 Full Pack, For.
Technology51A (Tc)
Vgs (Max)-
Vgs(th) (Max) @ Id?30V
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