Attributes

Key Value
Base Product NumberFQB33N10
CategoryDiscrete Semiconductor .
Current - Continuous Dr.33A (Tc)
Drain to Source Voltage.100 V
Drive Voltage (Max Rds .5V, 10V
FET Feature-
FET TypeN-Channel
Gate Charge (Qg) (Max) .40 nC @ 5 V
Input Capacitance (Ciss.1630 pF @ 25 V
MfrON Semiconductor
Mounting TypeSurface Mount
Operating Temperature-55?C ~ 175?C (TJ)
PackageTape & Reel (TR)
Package / CaseTO-263-3, D?Pak (2 Lead.
Part StatusActive
Power Dissipation (Max)3.75W (Ta), 127W (Tc)
Rds On (Max) @ Id, Vgs52mOhm @ 16.5A, 10V
SeriesQFET?
Supplier Device PackageD?PAK (TO-263AB)
TechnologyMOSFET (Metal Oxide)
Vgs (Max)?20V
Vgs(th) (Max) @ Id2V @ 250?A
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