Attributes

Key Value
Base Product NumberFQPF1
CategoryDiscrete Semiconductor .
Current - Continuous Dr.11.2A (Tc)
Drain to Source Voltage.80V
Drive Voltage (Max Rds .10V
FET Feature-
FET TypeN-Channel
Gate Charge (Qg) (Max) .15nC @ 10V
Input Capacitance (Ciss.450pF @ 25V
MfrON Semiconductor
Mounting TypeThrough Hole
Operating Temperature-55?C ~ 175?C (TJ)
PackageTube
Package / CaseTO-220-3 Full Pack
Part StatusObsolete
Power Dissipation (Max)30W (Tc)
Rds On (Max) @ Id, Vgs115mOhm @ 5.6A, 10V
SeriesQFET?
Supplier Device PackageTO-220F
TechnologyMOSFET (Metal Oxide)
Vgs (Max)?25V
Vgs(th) (Max) @ Id4V @ 250?A
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