Attributes

Key Value
@Ic (test) (A)10
@VCE (test)3.0
CaseTO3P
Collector Capacitance (.400 pF
Derate Above 25?C1.2
Forward Current Transfe.750
Ic Max. (A)20
Icbo Max. @Vcb Max. (A)2.0m
ManufacturerON Semiconductor
Mat.Silicon Logic
Max. hFE2.0k
Max. Operating Junction.150 ?C
Max. PD (W)160
Maximum Collector Curre.20 A
Maximum Collector Power.160 W
Maximum Collector-Base .100 V
Maximum Collector-Emitt.100 V
Maximum Emitter-Base Vo.5 V
Min hFE300
Oper. Temp (?C) Max.150
Pinout Equivalence Numb.4-33
PolarityNPN
R(sat) (?)500m
SKU84152
Surface Mounted Yes/NoNO
Transition Frequency (f.4 MHz
TypeTransistor Silicon NPN
Vbr CEO100
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