Attributes

Key Value
Current - Continuous Dr.2.2A (Ta)
Drain to Source Voltage.20 V
Drive Voltage (Max Rds .1.8V, 4.5V
FET FeatureSchottky Diode (Isolate.
FET TypeP-Channel
Gate Charge (Qg) (Max) .7.8 nC @ 4.5 V
Input Capacitance (Ciss.450 pF @ 10 V
MfrON Semiconductor
Mounting TypeSurface Mount
Operating Temperature-55?C ~ 150?C (TJ)
Package / Case6-WDFN Exposed Pad
Part StatusObsolete
Power Dissipation (Max)710mW (Ta)
Rds On (Max) @ Id, Vgs100mOhm @ 2A, 4.5V
Series-
Supplier Device Package6-WDFN (2x2)
TechnologyMOSFET (Metal Oxide)
Vgs (Max)?8V
Vgs(th) (Max) @ Id1V @ 250?A
prev