Attributes

Key Value
CategoryDiscrete Semiconductor .
Current - Continuous Dr.45A (Ta)
Drain to Source Voltage.60 V
Drive Voltage (Max Rds .5V
FET Feature-
FET TypeN-Channel
Gate Charge (Qg) (Max) .32 nC @ 5 V
Input Capacitance (Ciss.1700 pF @ 25 V
MfrON Semiconductor
Mounting TypeThrough Hole
Operating Temperature-55?C ~ 175?C (TJ)
PackageTube
Package / CaseTO-220-3
Part StatusObsolete
Power Dissipation (Max)2.4W (Ta), 125W (Tj)
Rds On (Max) @ Id, Vgs28mOhm @ 22.5A, 5V
Series-
Supplier Device PackageTO-220AB
TechnologyMOSFET (Metal Oxide)
Vgs (Max)?15V
Vgs(th) (Max) @ Id2V @ 250?A
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