ON Semiconductor NVB5860NT4G

mpnNVB5860NT4G
brandname: ON Semiconductor
manufacturername: ON Semiconductor

Attributes

Key	Value
Current - Continuous Dr.	220A (Tc)
Drain to Source Voltage.	60 V
Drive Voltage (Max Rds .	10V
FET Feature	-
FET Type	N-Channel
Gate Charge (Qg) (Max) .	180 nC @ 10 V
Input Capacitance (Ciss.	10760 pF @ 25 V
Mfr	ON Semiconductor
Mounting Type	Surface Mount
Operating Temperature	-55?C ~ 175?C (TJ)
Package / Case	TO-263-3, D?Pak (2 Lead.
Part Status	Obsolete
Power Dissipation (Max)	283W (Tc)
Rds On (Max) @ Id, Vgs	3mOhm @ 75A, 10V
Series	-
Supplier Device Package	D2PAK-3
Technology	MOSFET (Metal Oxide)
Vgs (Max)	?20V
Vgs(th) (Max) @ Id	4V @ 250?A