Attributes

Key Value
Base Product NumberNVF295
CategoryDiscrete Semiconductor .
Current - Continuous Dr.1.7A (Ta)
Drain to Source Voltage.60V
Drive Voltage (Max Rds .10V
FET Feature-
FET TypeP-Channel
Gate Charge (Qg) (Max) .14.3nC @ 10V
Input Capacitance (Ciss.492pF @ 25V
MfrON Semiconductor
Mounting TypeSurface Mount
Operating Temperature-55?C ~ 175?C (TJ)
PackageTape & Reel (TR)
Package / CaseTO-261-4, TO-261AA
Part StatusObsolete
Power Dissipation (Max)1W (Ta)
Rds On (Max) @ Id, Vgs185mOhm @ 2.4A, 10V
SeriesAutomotive, AEC-Q101
Supplier Device PackageSOT-223
TechnologyMOSFET (Metal Oxide)
Vgs (Max)?20V
Vgs(th) (Max) @ Id4V @ 1mA
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