Attributes

Key Value
Channel ModeEnhancement
Forward Diode Voltage1.1V
Height1.05mm
In-stock48000
Length6.1mm
Life CycleProduction
Marking Code4C05N
Maximum Drain Source Re.5 m?
Maximum Gate Source Vol.-20 V, +20 V
Maximum Gate Threshold .2.2V
Maximum Operating Tempe.+150 ?C
Maximum Power Dissipati.33 W
Minimum Operating Tempe.-55 ?C
Number of Elements per .1
Package/CaseSO?8FL
Product CategoriesTransistors - FETs, MOS.
RoHs StatusLead free / RoHS Compli.
Transistor ConfigurationSingle
Transistor MaterialSi
Typical Gate Charge @ V.30 nC @ 10 V
Width5.1mm
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