Attributes

Key Value
Base Product NumberBBS3002
CategoryDiscrete Semiconductor .
Current - Continuous Dr.100A (Ta)
Drain to Source Voltage.60 V
Drive Voltage (Max Rds .4V, 10V
FET Feature-
FET TypeP-Channel
Gate Charge (Qg) (Max) .280 nC @ 10 V
Input Capacitance (Ciss.13200 pF @ 20 V
Mfronsemi
Mounting TypeSurface Mount
Operating Temperature150?C (TJ)
PackageTape & Reel (TR)
Package / CaseTO-263-3, D?Pak (2 Lead.
Power Dissipation (Max)90W (Tc)
Product StatusObsolete
Rds On (Max) @ Id, Vgs5.8mOhm @ 50A, 10V
Series-
Supplier Device PackageD?PAK (TO-263)
TechnologyMOSFET (Metal Oxide)
Vgs (Max)?20V
Vgs(th) (Max) @ Id-
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