Attributes

Key Value
Base Product NumberFCMT099
CategoryDiscrete Semiconductor .
Current - Continuous Dr.30A (Tc)
Drain to Source Voltage.650 V
Drive Voltage (Max Rds .10V
FET Feature-
FET TypeN-Channel
Gate Charge (Qg) (Max) .56 nC @ 10 V
Input Capacitance (Ciss.2270 pF @ 400 V
Mfronsemi
Mounting TypeSurface Mount
Operating Temperature-55?C ~ 150?C (TJ)
PackageTape & Reel (TR)
Package / Case4-PowerTSFN
Part StatusActive
Power Dissipation (Max)227W (Tc)
Rds On (Max) @ Id, Vgs99mOhm @ 15A, 10V
SeriesSuperFET? III
Supplier Device PackagePower88
TechnologyMOSFET (Metal Oxide)
Vgs (Max)?30V
Vgs(th) (Max) @ Id4.5V @ 3mA
© 2025 · Data Alchemy · Version 60 · ts:1760052239
prev