onsemi FDB3632_SB82115

mpnFDB3632_SB82115
brandname: onsemi
manufacturername: onsemi

Attributes

Key	Value
Base Product Number	FDB363
Category	Discrete Semiconductor .
Current - Continuous Dr.	12A (Ta), 80A (Tc)
Drain to Source Voltage.	100 V
Drive Voltage (Max Rds .	6V, 10V
FET Feature	-
FET Type	N-Channel
Gate Charge (Qg) (Max) .	110 nC @ 10 V
Input Capacitance (Ciss.	6000 pF @ 25 V
Mfr	onsemi
Mounting Type	Surface Mount
Operating Temperature	-55?C ~ 175?C (TJ)
Package	Bulk
Package / Case	TO-263-3, D?Pak (2 Lead.
Power Dissipation (Max)	310W (Tc)
Product Status	Obsolete
Rds On (Max) @ Id, Vgs	9mOhm @ 80A, 10V
Series	PowerTrench?
Supplier Device Package	D?PAK (TO-263)
Technology	MOSFET (Metal Oxide)
Vgs (Max)	?20V
Vgs(th) (Max) @ Id	4V @ 250?A