Attributes

Key Value
Base Product NumberFDC655
CategoryDiscrete Semiconductor .
Current - Continuous Dr.6.3A (Ta)
Drain to Source Voltage.30 V
Drive Voltage (Max Rds .4.5V, 10V
FET Feature-
FET TypeN-Channel
Gate Charge (Qg) (Max) .13 nC @ 10 V
Input Capacitance (Ciss.620 pF @ 15 V
Mfronsemi
Mounting TypeSurface Mount
Operating Temperature-55?C ~ 150?C (TJ)
PackageTape & Reel (TR)
Package / CaseSOT-23-6 Thin, TSOT-23-6
Power Dissipation (Max)800mW
Product StatusObsolete
Rds On (Max) @ Id, Vgs25mOhm @ 6.3A, 10V
SeriesPowerTrench?
Supplier Device PackageSuperSOT?-6
TechnologyMOSFET (Metal Oxide)
Vgs (Max)?20V
Vgs(th) (Max) @ Id3V @ 250?A
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