Attributes

Key Value
Base Product NumberFDMS86369
CategoryDiscrete Semiconductor .
Current - Continuous Dr.65A (Tc)
Drain to Source Voltage.80 V
Drive Voltage (Max Rds .10V
FET Feature-
FET TypeN-Channel
Gate Charge (Qg) (Max) .46 nC @ 10 V
Input Capacitance (Ciss.2470 pF @ 40 V
Mfronsemi
Mounting TypeSurface Mount
Operating Temperature-55?C ~ 175?C (TJ)
PackageTape & Reel (TR)
Package / Case8-PowerVDFN
Part StatusObsolete
Power Dissipation (Max)107W (Tc)
Rds On (Max) @ Id, Vgs7.5mOhm @ 65A, 10V
SeriesAutomotive, AEC-Q101, P.
Supplier Device PackagePower56
TechnologyMOSFET (Metal Oxide)
Vgs (Max)?20V
Vgs(th) (Max) @ Id4V @ 250?A
© 2025 · Data Alchemy · Version 60 · ts:1760052239
prev