Attributes

Key Value
Base Product NumberFQP30
CategoryDiscrete Semiconductor .
Current - Continuous Dr.32A (Tc)
Drain to Source Voltage.60 V
Drive Voltage (Max Rds .5V, 10V
FET Feature-
FET TypeN-Channel
Gate Charge (Qg) (Max) .20 nC @ 5 V
Input Capacitance (Ciss.1040 pF @ 25 V
Mfronsemi
Mounting TypeThrough Hole
Operating Temperature-55?C ~ 175?C (TJ)
PackageTube
Package / CaseTO-220-3
Power Dissipation (Max)79W (Tc)
Product StatusLast Time Buy
Rds On (Max) @ Id, Vgs35mOhm @ 16A, 10V
SeriesQFET?
Supplier Device PackageTO-220-3
TechnologyMOSFET (Metal Oxide)
Vgs (Max)?20V
Vgs(th) (Max) @ Id2.5V @ 250?A
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