Attributes

Key Value
CategoryDiscrete Semiconductor .
Current - Continuous Dr.99A (Tc)
Drain to Source Voltage.650 V
Drive Voltage (Max Rds .15V, 18V
FET Feature-
FET TypeN-Channel
Gate Charge (Qg) (Max) .164 nC @ 18 V
Input Capacitance (Ciss.3480 pF @ 325 V
Mfronsemi
Mounting TypeThrough Hole
Operating Temperature-55?C ~ 175?C (TJ)
PackageTube
Package / CaseTO-247-3
Power Dissipation (Max)348W (Tc)
Product StatusActive
Rds On (Max) @ Id, Vgs28.5mOhm @ 45A, 18V
Series-
Supplier Device PackageTO-247-3
TechnologySiCFET (Silicon Carbide)
Vgs (Max)+22V, -8V
Vgs(th) (Max) @ Id4.3V @ 15.5mA
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