Attributes

Key Value
Base Product NumberNTMYS3
CategoryDiscrete Semiconductor .
Current - Continuous Dr.22A (Ta), 87A (Tc)
Drain to Source Voltage.40 V
Drive Voltage (Max Rds .4.5V, 10V
FET Feature-
FET TypeN-Channel
Gate Charge (Qg) (Max) .18 nC @ 10 V
Input Capacitance (Ciss.1600 pF @ 25 V
Mfronsemi
Mounting TypeSurface Mount
Operating Temperature-55?C ~ 175?C (TJ)
PackageTape & Reel (TR)
Package / CaseSOT-1023, 4-LFPAK
Part StatusActive
Power Dissipation (Max)3.6W (Ta), 55W (Tc)
Rds On (Max) @ Id, Vgs3.7mOhm @ 20A, 10V
Series-
Supplier Device PackageLFPAK4 (5x6)
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20V
Vgs(th) (Max) @ Id2V @ 50?A
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