Attributes

Key Value
CategoryDiscrete Semiconductor .
Current - Continuous Dr.6A (Ta), 35A (Tc)
Drain to Source Voltage.100 V
Drive Voltage (Max Rds .10V
FET Feature-
FET TypeN-Channel
Gate Charge (Qg) (Max) .21.5 nC @ 10 V
Input Capacitance (Ciss.1366 pF @ 50 V
Mfronsemi
Mounting TypeSurface Mount
Operating Temperature-55?C ~ 175?C (TJ)
PackageTape & Reel (TR)
Package / Case8-PowerWDFN
Part StatusActive
Power Dissipation (Max)2.5W (Ta), 74W (Tc)
Rds On (Max) @ Id, Vgs30mOhm @ 12A, 10V
Series-
Supplier Device Package8-WDFN (3.3x3.3)
TechnologyMOSFET (Metal Oxide)
Vgs (Max)?20V
Vgs(th) (Max) @ Id4V @ 61?A
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