Attributes

Key Value
Base Product NumberNTTFS4
CategoryDiscrete Semiconductor .
Current - Continuous Dr.8A (Ta), 41A (Tc)
Drain to Source Voltage.30 V
Drive Voltage (Max Rds .4.5V, 10V
FET Feature-
FET TypeN-Channel
Gate Charge (Qg) (Max) .20.4 nC @ 10 V
Input Capacitance (Ciss.1386 pF @ 15 V
Mfronsemi
Mounting TypeSurface Mount
Operating Temperature-55?C ~ 150?C (TJ)
PackageTape & Reel (TR)
Package / Case8-PowerWDFN
Power Dissipation (Max)840mW (Ta), 22.3W (Tc)
Product StatusObsolete
Rds On (Max) @ Id, Vgs7.2mOhm @ 20A, 10V
Series-
Supplier Device Package8-WDFN (3.3x3.3)
TechnologyMOSFET (Metal Oxide)
Vgs (Max)?20V
Vgs(th) (Max) @ Id2.2V @ 250?A
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