Attributes

Key Value
Base Product NumberNVB190
CategoryDiscrete Semiconductor .
Current - Continuous Dr.20A (Tc)
Drain to Source Voltage.650 V
Drive Voltage (Max Rds .10V
FET Feature-
FET TypeN-Channel
Gate Charge (Qg) (Max) .34 nC @ 10 V
Input Capacitance (Ciss.1605 pF @ 400 V
Mfronsemi
Mounting TypeSurface Mount
Operating Temperature-55?C ~ 150?C (TJ)
PackageTape & Reel (TR)
Package / CaseTO-263-3, D?Pak (2 Lead.
Part StatusActive
Power Dissipation (Max)162W (Tc)
Rds On (Max) @ Id, Vgs190mOhm @ 10A, 10V
SeriesAutomotive, AEC-Q101, S.
Supplier Device PackageD?PAK-3 (TO-263-3)
TechnologyMOSFET (Metal Oxide)
Vgs (Max)?30V
Vgs(th) (Max) @ Id5V @ 430?A
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