onsemi NVD5117PLT4G-VF01

mpnNVD5117PLT4G-VF01
brandname: onsemi
manufacturername: onsemi

Attributes

Key	Value
Category	Discrete Semiconductor .
Current - Continuous Dr.	11A (Ta), 61A (Tc)
Drain to Source Voltage.	60 V
Drive Voltage (Max Rds .	4.5V, 10V
FET Feature	-
FET Type	P-Channel
Gate Charge (Qg) (Max) .	85 nC @ 10 V
Input Capacitance (Ciss.	4800 pF @ 25 V
Mounting Type	Surface Mount
Operating Temperature	-55?C ~ 175?C (TJ)
Package / Case	TO-252-3, DPak (2 Leads.
Part Status	Active
Power Dissipation (Max)	4.1W (Ta), 118W (Tc)
Rds On (Max) @ Id, Vgs	16mOhm @ 29A, 10V
Supplier Device Package	DPAK
Technology	MOSFET (Metal Oxide)
Vgs (Max)	?20V
Vgs(th) (Max) @ Id	2.5V @ 250?A